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Reference Design Library > Power Management > Power Output Stages (H-Bridge, Half Bridge)
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Designs (55)

55 Results - Page 1/6 |< < 1 2 3 4 5
Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9051: 1A, 0 ~ 40V, 15MHz, Class E Amplifier Manufacturer: EPC

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9054: 1A, Wireless Power Amp, 0 ~ 40V, ~ 60V, ~ 80V Manufacturer: EPC

The EPC9054 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9060: 25A, 0 ~ 40V, Half H-Bridge Driver Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9066: 2.7A, 0 ~ 40V, Half H-Bridge Manufacturer: EPC

The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9001: 15A @ 0 ~ 40V, Half Bridge Manufacturer: EPC

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EVALPWD13F60: 8A, 0 ~ 600V, H-Bridge Driver Manufacturer: STMicroelectronics

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9084: 4A, 0 ~ 350V, Half H-Bridge Manufacturer: EPC

The EPC9084 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring two EPC2050 enhancement mode (eGaN) field effect transistors (FETs). The purpose of this development board is to simplify the evaluation process of the EPC2050 eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9048: 12A, 0 ~ 160V, Half H-Bridge Manufacturer: EPC

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) STK554U392AGEVB: 15A, 0 ~ 450V, 3-Ph Half Bridges Manufacturer: ON Semiconductor

Evaluation board for the "Inverter Power H-IC" highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP module.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9203: 20A, 0 ~ 60V, Half H-Bridge Driver Manufacturer: EPC

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

55 Results - Page 1/6 |< < 1 2 3 4 5