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These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors
The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives
The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives
The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz.
The EPC9054 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz.
The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives
The EPC9013 development board features the 100 VEPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum
The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019
These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).
The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage.
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Digi-Key customers in the United States can select from a range of delivery options, including Ground shipping at $6.99 and 2-Day at $12.99
Credit account for qualified institutions and businesses
Payment in Advance by Wire Transfer
More Products From Fully Authorized Partners
Average Time to Ship 1-3 Days. Please see product page, cart, and checkout for actual ship speed.
Extra Ship Charges May Apply
For more information visit Help & Support
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