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EPC9013: 35A, 100V, Half Bridge

Summary

The EPC9013 development board features the 100 VEPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive.The purpose of this development board is to simplify the evaluation process of the EPC2001C eGaN FET for high current operation by including all the critical components on a singleboard that can be easily connected into any existing converter.

The EPC9013 development board is 2” x 2” and features eight EPC2001C eGaN FETs using the Texas Instruments LM5113 gatedriver. The development board configuration is recommended for high current applications. The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency. A complete block diagram of the circuit is given in Figure 1.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1040-ND
Eval Board Supplier EPC
Eval Board Normally In Stock
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 100 V
Current Out 35 A
Interface PWM, Dual
Features Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
Switching Frequency (Max) Not given
Component Count + Extras 55 + 12
Design Author EPC
Main I.C. Base Part EPC2001C
Date Created By Author 2013-12
Date Added To Library 2017-06

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