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This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.
The purpose of these development boards is to simplify the evaluation process by optimizing the layout and including all the critical components on a single board that can be easily connected into any existing converter.
A complete block diagram of the circuit is given in Figure 1.
|Sub-Category||Power Output Stages (H-Bridge, Half Bridge)|
|Eval Board Part Number||917-1096-ND|
|Eval Board Supplier||EPC|
Normally In Stock
1 Half H-Bridge
|Voltage Out Range||
0 ~ 60 V
|Switching Frequency (Max)|
|Component Count + Extras||
11 + 0
|Main I.C. Base Part||