This slide looks at the evolution trend of semiconductor process components. From the figure on this slide, customers can find that the more advanced the manufacturing process, the smaller the volume of the components. There are two main scaling parameters that consist of the gate oxide thickness of the gate oxide layer and the junction depth of the junction becoming smaller and smaller. This can effectively reduce the volume of MOS components and the distance of electron transmission, thereby improving speed performance and reducing costs. However, the price that must be paid is that the ESD tolerance of the component of the advanced process will become worse and worse. The fundamental reason is that its shrinking size leads to ESD which is easier to break down the component itself, therefore, the ESD issue has become a problem that cannot be ignored in the advanced nanometer process.