TO-247N
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCT3120ALGC11

Digi-Key Part Number
SCT3120ALGC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT3120ALGC11
Supplier
Description
SICFET N-CH 650V 21A TO247N
Detailed Description
N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id
5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
103W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
All prices are in USD
Tube
QtyUnit PriceExt Price
1$7.98000$7.98
10$7.21300$72.13
100$5.97190$597.19
500$5.20024$2,600.12
1,000$4.57500$4,575.00
Additional Resources
AttributeDescription
Other NamesQ12567120
Standard Package450
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