SCT3120 Rohm Semiconductor

Discrete Semiconductor Products | Single

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SCT3120ALGC11 SICFET N-CH 650V 21A TO247N Rohm Semiconductor	5,567 In Stock	1 : $10.02000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	18V	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	103W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
SCT3120ALHRC11 SICFET N-CH 650V 21A TO247N Rohm Semiconductor	2,204 In Stock	1 : $9.37000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	18V	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	103W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N	TO-247-3
SCT3120AW7TL SICFET N-CH 650V 21A TO263-7 Rohm Semiconductor	788 In Stock	1 : $12.72000 Cut Tape (CT) 1,000 : $6.25125 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	-	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	100W	175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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