SiCFET (Silicon Carbide) Single FETs, MOSFETs

Results: 587
Manufacturer
Alpha & Omega Semiconductor Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDCoolCADDiodes IncorporatedDiotec SemiconductorGeneSiC SemiconductorGoford SemiconductorInfineon TechnologiesInventchipIXYSLittelfuse Inc.Microchip Technology
Series
-C2M™C3M™CoolSiC™CoolSiC™ Gen 2CoolSIC™ M1E SeriesE-SeriesEasyPACK™G2R™G3R™G3R™, LoRing™NC1MZ-FET™
Packaging
BoxBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Drain to Source Voltage (Vdss)
650 V700 V750 V900 V1000 V1200 V1700 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)3.7A (Tc)4A (Tc)4.6A (Tc)4.7A (Tc)4.9A (Tc)5A (Tc)5.2A (Tc)5.3A (Tc)5.9A (Tc)6A (Tc)6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 18V12V12V, 15V15V15V, 18V15V, 20V18V18V, 20V20V-
Rds On (Max) @ Id, Vgs
7.7mOhm @ 89.9A, 18V8.5mOhm @ 146.3A, 18V9.9mOhm @ 108A, 18V10.6mOhm @ 90.3A, 18V12.2mOhm @ 56.7A, 18V13mOhm @ 100A, 18V14.2mOhm @ 60A, 12V16mOhm @ 80A, 20V16.2mOhm @ 50A, 18V16.9mOhm @ 58A, 18V17mOhm @ 100A, 20V17.1mOhm @ 40.4A, 18V
Vgs(th) (Max) @ Id
2.3V @ 2mA2.3V @ 5mA2.4V @ 10mA2.4V @ 1mA (Typ)2.4V @ 1mA2.4V @ 4mA (Typ)2.4V @ 4mA2.4V @ 5mA2.4V @ 750µA2.5V @ 1mA2.5V @ 500µA2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 12 V5.3 nC @ 18 V5.9 nC @ 18 V6 nC @ 18 V8 nC @ 12 V8.5 nC @ 18 V9.4 nC @ 18 V9.5 nC @ 15 V9.7 nC @ 18 V10 nC @ 18 V11 nC @ 12 V11 nC @ 20 V
Vgs (Max)
-10V, +20V-8V, +19V+15V, -4V+15V, -5V±15V+18V, -15V+18V, -5V+18V, -8V+19V, -10V+19V, -8V+20V, -10V+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V133 pF @ 1000 V139 pF @ 1000 V150 pF @ 600 V170 pF @ 800 V182 pF @ 800 V184 pF @ 1000 V184 pF @ 1360 V184 pF @ 800 V191 pF @ 1000 V196 pF @ 800 V200 pF @ 1000 V
FET Feature
-Current SensingDepletion Mode
Power Dissipation (Max)
313mW (Tj)3.7W (Ta), 468W (Tc)3.7W (Ta), 477W (Tc)35W (Tc)40.8W (Tc)44W (Tc)50W (Tc)52W (Tc)54W (Tc)57W (Tc)60W (Tc)62.5W (Tc)
Operating Temperature
-60°C ~ 175°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C-55°C ~ 175°C (TJ)-55°C ~ 175°C-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)175°C (TJ)175°C-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
-Chassis MountSurface MountThrough Hole
Supplier Device Package
4-TDFN (8x8)8-HPSOF-D2PAK (7-Lead)D2PAK-7D2PAK-7LD3D3PAKDieH2PAK-2H2PAK-7H2Pak-2
Package / Case
4-PowerTSFN8-PowerSFN8-PowerVDFN22-PowerBSOP Module-D-3 ModuleDieModuleSOT-227-4, miniBLOCTO-220-3TO-247-3TO-247-4TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7 (Straight Leads)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
3,037
In Stock
1 : $4.93000
Cut Tape (CT)
1,000 : $2.54990
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
+20V, -10V
275 pF @ 1000 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
9,913
In Stock
1 : $5.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,893
In Stock
1 : $5.58000
Cut Tape (CT)
1,000 : $2.88529
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R350M1HXTMA1
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1,029
In Stock
1 : $6.26000
Cut Tape (CT)
1,000 : $3.53924
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
+18V, -15V
196 pF @ 800 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7
IMBF170R450M1XTMA1
SICFET N-CH 1700V 9.8A TO263-7
Infineon Technologies
1,512
In Stock
1 : $6.30000
Cut Tape (CT)
1,000 : $3.57523
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9.8A (Tc)
12V, 15V
450mOhm @ 2A, 15V
5.7V @ 2.5mA
11 nC @ 12 V
+20V, -10V
610 pF @ 1000 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
3,401
In Stock
1 : $6.52000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
3,785
In Stock
1 : $7.21000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-3PFM
SCT2H12NZGC11
SICFET N-CH 1700V 3.7A TO3PFM
Rohm Semiconductor
2,221
In Stock
1 : $7.21000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
3.7A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 900µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
35W (Tc)
175°C (TJ)
-
-
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
TO-247N
SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
Rohm Semiconductor
6,315
In Stock
1 : $8.80000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
1,990
In Stock
1 : $10.09000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
3,464
In Stock
1 : $10.50000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
Wolfspeed, Inc.
493
In Stock
1 : $10.67000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
706
In Stock
1 : $10.77000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
NTHL080N120SC1A
SICFET N-CH 1200V 31A TO247-3
onsemi
111
In Stock
1 : $10.92000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
20V
110mOhm @ 20A, 20V
4.3V @ 5mA
56 nC @ 20 V
+25V, -15V
1670 pF @ 800 V
-
178W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
C2D10120D
C2M0280120D
SICFET N-CH 1200V 10A TO247-3
Wolfspeed, Inc.
14,410
In Stock
1 : $10.96000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
20V
370mOhm @ 6A, 20V
2.8V @ 1.25mA (Typ)
20.4 nC @ 20 V
+25V, -10V
259 pF @ 1000 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
Wolfspeed, Inc.
889
In Stock
1 : $11.37000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
4.9A (Tc)
20V
1.1Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
191 pF @ 1000 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT2450KEGC11
1200V, 10A, THD, SILICON-CARBIDE
Rohm Semiconductor
130
In Stock
1 : $11.41000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
18V
585mOhm @ 3A, 18V
4V @ 900µA
27 nC @ 18 V
+22V, -6V
463 pF @ 800 V
-
85W (Tc)
175°C
-
-
Through Hole
TO-247N
TO-247-3
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
261
In Stock
1 : $11.58000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3 AC EP
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
236
In Stock
1 : $11.97000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
1,049
In Stock
1 : $12.24000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0120090D
SICFET N-CH 900V 23A TO247-3
Wolfspeed, Inc.
403
In Stock
1 : $12.26000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
23A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3 nC @ 15 V
+18V, -8V
414 pF @ 600 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
MSC080SMA120B
SICFET N-CH 1200V 37A TO247-3
Microchip Technology
104
In Stock
1 : $12.80000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
20V
100mOhm @ 15A, 20V
2.8V @ 1mA
64 nC @ 20 V
+23V, -10V
838 pF @ 1000 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT3060ALGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
425
In Stock
1 : $13.64000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247-3 AC EP
AIMW120R080M1XKSA1
1200V COOLSIC MOSFET PG-TO247-3
Infineon Technologies
106
In Stock
1 : $14.51000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A (Tc)
15V
104mOhm @ 13A, 15V
5.7V @ 5.6mA
28 nC @ 15 V
+20V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3-41
TO-247-3
C2D10120D
C2M0160120D
SICFET N-CH 1200V 19A TO247-3
Wolfspeed, Inc.
1,483
In Stock
1 : $15.91000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
20V
196mOhm @ 10A, 20V
2.5V @ 500µA
32.6 nC @ 20 V
+25V, -10V
527 pF @ 800 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
Showing
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SiCFET (Silicon Carbide) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.