SiCFET (Silicon Carbide) Single FETs, MOSFETs

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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SCT2450KEGC11
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
1,915
In Stock
1 : $5.78000
Tube
-
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,273
In Stock
1 : $5.88000
Cut Tape (CT)
1,000 : $2.27712
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
2,269
In Stock
1 : $6.49000
Cut Tape (CT)
2,000 : $2.59675
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
RGCL80TK60GC11
SCT2H12NZGC11
SICFET N-CH 1700V 3.7A TO3PFM
Rohm Semiconductor
611
In Stock
1 : $6.89000
Tube
-
-
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Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
3.7A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 900µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
35W (Tc)
175°C (TJ)
-
-
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
PG-TO263-7
IMBF170R450M1XTMA1
SICFET N-CH 1700V 9.8A TO263-7
Infineon Technologies
344
In Stock
1 : $6.99000
Cut Tape (CT)
1,000 : $2.86325
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9.8A (Tc)
12V, 15V
450mOhm @ 2A, 15V
5.7V @ 2.5mA
11 nC @ 12 V
+20V, -10V
610 pF @ 1000 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
934
In Stock
1 : $8.63000
Cut Tape (CT)
1,000 : $4.32688
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V, 20V
49mOhm @ 22.9A, 18V
5.6V @ 4.6mA
28 nC @ 18 V
+23V, -7V
997 pF @ 400 V
-
197W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
866
In Stock
1 : $9.18000
Tube
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Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-4
NTH4L160N120SC1
SICFET N-CH 1200V 17.3A TO247
onsemi
538
In Stock
1,800
Factory
1 : $9.55000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17.3A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
34 nC @ 20 V
+25V, -15V
665 pF @ 800 V
-
111W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCT2450KEGC11
SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
Rohm Semiconductor
4,120
In Stock
1 : $9.77000
Tube
-
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
PG-TO247-4-1
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
561
In Stock
1 : $9.88000
Tube
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Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
IPW65R099CFD7AXKSA1
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
782
In Stock
1 : $10.03000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
998
In Stock
1 : $10.11000
Cut Tape (CT)
1,000 : $5.33904
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
GeneSiC Semiconductor
606
In Stock
1 : $10.40000
Tube
-
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2,218
In Stock
1 : $10.50000
Tube
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Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
1,446
In Stock
1 : $10.77000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
NTHL040N120M3S
SIC MOS TO247-3L 40MOHM 1200V M3
onsemi
1,302
In Stock
130,050
Factory
1 : $11.01000
Tube
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-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO263-7
C3M0160120J
SICFET N-CH 1200V 17A TO263-7
Wolfspeed, Inc.
2,059
In Stock
1 : $11.14000
Tube
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N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
24 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4026DW7TL
SCT4062KW7HRTL
1200V, 24A, 7-PIN SMD, TRENCH-ST
Rohm Semiconductor
3,769
In Stock
1 : $12.00000
Cut Tape (CT)
1,000 : $8.83000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
24A (Tc)
18V
81mOhm @ 12A, 18V
4.8V @ 6.45mA
64 nC @ 18 V
+21V, -4V
1498 pF @ 800 V
-
93W
175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,240
In Stock
1 : $12.07000
Cut Tape (CT)
2,000 : $5.88263
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
D2PAK-7
NVBG160N120SC1
SICFET N-CH 1200V 19.5A D2PAK
onsemi
2,191
In Stock
140,000
Factory
1 : $12.17000
Cut Tape (CT)
800 : $5.94825
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
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Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19.5A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
33.8 nC @ 20 V
+25V, -15V
678 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
981
In Stock
1 : $12.24000
Tube
-
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Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL060N090SC1
SICFET N-CH 900V 46A TO247-3
onsemi
475
In Stock
12,600
Factory
1 : $12.42000
Tube
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-
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N-Channel
SiCFET (Silicon Carbide)
900 V
46A (Tc)
15V
84mOhm @ 20A, 15V
4.3V @ 5mA
87 nC @ 15 V
+19V, -10V
1770 pF @ 450 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
848
In Stock
1 : $12.98000
Cut Tape (CT)
800 : $9.94005
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
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N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
+15V, -5V
854 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
145
In Stock
1 : $13.00000
Tube
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N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
62 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
PG-TO263-7-12
IMBG120R045M1HXTMA1
SICFET N-CH 1.2KV 47A TO263
Infineon Technologies
1,462
In Stock
1 : $13.40000
Cut Tape (CT)
1,000 : $6.74218
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
47A (Tc)
-
63mOhm @ 16A, 18V
5.7V @ 7.5mA
46 nC @ 18 V
+18V, -15V
1527 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
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SiCFET (Silicon Carbide) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.