Rohm Semiconductor Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
RS7N160BHTB1 NCH 80V 160A, DFN5060-8S, POWER Rohm Semiconductor	2,207 In Stock	1 : $4.63000 Cut Tape (CT) 2,500 : $1.65125 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	160A (Ta)	6V, 10V	2.6mOhm @ 50A, 10V	4V @ 1mA	73 nC @ 10 V	±20V	4470 pF @ 40 V	-	3W (Ta), 160W (Tc)	150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7G200CGTB1 NCH 40V 410A, DFN5060-8S, POWER Rohm Semiconductor	2,480 In Stock	1 : $4.85000 Cut Tape (CT) 2,500 : $1.75500 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	410A (Ta), 200A (Tc)	4.5V, 10V	0.64mOhm @ 50A, 10V	2.5V @ 80mA	145 nC @ 10 V	±20V	9150 pF @ 20 V	-	3.6W (Ta), 216W (Tc)	175°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7P200BMTB1 NCH 100V 200A, DFN5060-8S, WIDE- Rohm Semiconductor	1,442 In Stock	1 : $5.02000 Cut Tape (CT) 2,500 : $1.84125 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	4mOhm @ 50A, 10V	4V @ 1mA	105 nC @ 10 V	±20V	7800 pF @ 50 V	-	3.6W (Ta), 217W (Tc)	175°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7E200BGTB1 NCH 30V 390A, DFN5060-8S, POWER Rohm Semiconductor	2,377 In Stock	1 : $5.08000 Cut Tape (CT) 2,500 : $1.87250 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	390A (Ta)	4.5V, 10V	0.67mOhm @ 50A, 10V	2.5V @ 1mA	135 nC @ 10 V	±20V	9500 pF @ 15 V	-	3W (Ta), 180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7N200BHTB1 NCH 80V 230A, DFN5060-8S, POWER Rohm Semiconductor	2,122 In Stock	1 : $5.17000 Cut Tape (CT) 2,500 : $1.91375 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	230A (Ta)	6V, 10V	2mOhm @ 50A, 10V	4V @ 1mA	92 nC @ 10 V	±20V	6550 pF @ 40 V	-	3W (Ta), 180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7R125CHTB1 NCH 150V 125A, DFN5060-8S, POWER Rohm Semiconductor	2,500 In Stock	1 : $5.22000 Cut Tape (CT) 2,500 : $1.93750 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	125A (Tc)	8V, 10V	8.3mOhm @ 50A, 10V	4V @ 1mA	49 nC @ 10 V	±20V	3000 pF @ 75 V	-	3.5W (Ta), 217W (Tc)	175°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7L200CHTB1 NCH 60V 270A, DFN5060-8S, POWER Rohm Semiconductor	0 In Stock Check Lead Time	1 : $3.61000 Cut Tape (CT) 2,500 : $1.94531 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	270A (Ta), 200A (Tc)	6V, 10V	1.44mOhm @ 50A, 10V	4V @ 30mA	90 nC @ 10 V	±20V	6350 pF @ 30 V	-	3.6W (Ta), 216W (Tc)	175°C	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7L200CGTB1 NCH 60V 275A, DFN5060-8S, POWER Rohm Semiconductor	0 In Stock Check Lead Time	1 : $3.61000 Cut Tape (CT) 2,500 : $1.94531 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	275A (Ta), 200A (Tc)	4.5V, 10V	1.39mOhm @ 50A, 10V	2.5V @ 5.4mA	105 nC @ 10 V	±20V	6750 pF @ 30 V	-	3.6W (Ta), 216W (Tc)	175°C	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7G200CHTB1 NCH 40V 445A, DFN5060-8S, POWER Rohm Semiconductor	0 In Stock Check Lead Time	1 : $4.85000 Cut Tape (CT) 2,500 : $1.75500 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	445A (Ta), 200A (Tc)	6V, 10V	0.65mOhm @ 50A, 10V	4V @ 1mA	107 nC @ 10 V	±20V	8150 pF @ 20 V	-	3.6W (Ta), 216W (Tc)	175°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7P150BHTB1 NCH 100V 150A, DFN5060-8S, POWER Rohm Semiconductor	0 In Stock Check Lead Time	1 : $5.00000 Cut Tape (CT) 2,500 : $1.83250 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	150A (Tc)	6V, 10V	3.8mOhm @ 50A, 10V	4V @ 1mA	74 nC @ 10 V	±20V	4740 pF @ 50 V	-	3W (Ta), 180W (Tc)	150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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