Rohm Semiconductor Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
RS7N160BHTB1 NCH 80V 160A, DFN5060-8S, POWER Rohm Semiconductor	2,500 In Stock	2,500 : $1.65125 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	160A (Ta)	6V, 10V	2.6mOhm @ 50A, 10V	4V @ 1mA	73 nC @ 10 V	±20V	4470 pF @ 40 V	-	3W (Ta), 160W (Tc)	150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7E200BGTB1 NCH 30V 390A, DFN5060-8S, POWER Rohm Semiconductor	2,485 In Stock	1 : $5.08000 Cut Tape (CT) 2,500 : $1.91366 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	390A (Ta), 200A (Tc)	4.5V, 10V	0.67mOhm @ 50A, 10V	2.5V @ 1mA	135 nC @ 10 V	±20V	9500 pF @ 15 V	-	3W (Ta), 180W (Tc)	150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN
RS7N200BHTB1 NCH 80V 230A, DFN5060-8S, POWER Rohm Semiconductor	2,255 In Stock	1 : $5.17000 Cut Tape (CT) 2,500 : $1.91375 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	230A (Ta), 200A (Tc)	6V, 10V	2mOhm @ 50A, 10V	4V @ 1mA	92 nC @ 10 V	±20V	6550 pF @ 40 V	-	3W (Ta), 180W (Tc)	150°C (TJ)	-	-	Surface Mount	DFN5060-8S	8-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.