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Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.
Review of the design specifications of a 500 W 1/8th brick converter
eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Detailing the work done to make it as easy as possible to use eGaN FETs in power conversion applications.
The new-generation is lead free and halogen free and has improved electrical performance.
EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
The operation of EPC’s enhancement mode gallium nitride transistors.
The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.
eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.
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