
SCT20N120 | ||
---|---|---|
Digi-Key Part Number | 497-15170-ND | |
Manufacturer | ||
Manufacturer Product Number | SCT20N120 | |
Description | SICFET N-CH 1200V 20A HIP247 | |
Manufacturer Standard Lead Time | 52 Weeks | |
Detailed Description | N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ | |
Customer Reference | ||
Datasheet | Datasheet |
Type | Description | Select |
---|---|---|
Category | ||
Mfr | ||
Series | - | |
Package | Tube | |
Product Status | Active | |
FET Type | ||
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 20V | |
Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 20 V | |
Vgs (Max) | +25V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 175W (Tc) | |
Operating Temperature | -55°C ~ 200°C (TJ) | |
Mounting Type | ||
Supplier Device Package | HiP247™ | |
Package / Case | ||
Base Product Number |
Resource Type | Link |
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Datasheets | |
Product Training Modules | |
Featured Product | SCT20N120 and SCT30N120 Silicon-Carbide Power MOSFETs |
PCN Design/Specification | Lead Frame Base Material 20/Dec/2021 |
PCN Assembly/Origin | SCTx/Hx/Wx 16/Jun/2022 |
HTML Datasheet | Fine Tune SIC MOSFET Gate Driver |
EDA Models | SCT20N120 by Ultra Librarian |
Attribute | Description |
---|---|
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Qty | Unit Price | Ext Price |
---|---|---|
1 | $17.08000 | $17.08 |
10 | $15.69300 | $156.93 |
100 | $13.25390 | $1,325.39 |
500 | $11.79024 | $5,895.12 |
Attribute | Description |
---|---|
Other Names | 497-15170 |
Standard Package | 30 |