USD

TO-247-3 HiP
SCTW100N65G2AG
Digi-Key Part Number
497-SCTW100N65G2AG-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTW100N65G2AG
Supplier
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Product Attributes
Type
Description
Select
Category
Mfr
STMicroelectronics
Series
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Vgs (Max)
+22V, -10V
FET Feature
-
Power Dissipation (Max)
420W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
Price and Procurement

56 In Stock
Can ship immediately
Price BreakUnit PriceExtended Price
1$26.34000$26.34
10$24.29700$242.97
25$23.20520$580.13
100$20.47500$2,047.50
500$17.47200$8,736.00
1,000$17.19900$17,199.00
2,500$16.78950$41,973.75
5,000$16.38000$81,900.00
Import Tariff may apply to this part if shipping to the United States