N-Channel 1700 V 13A (Tc) 107W (Tc) Through Hole TO-247-4L
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N-Channel 1700 V 13A (Tc) 107W (Tc) Through Hole TO-247-4L
TO-247-4

NVH4L200N170M1

DigiKey Part Number
488-NVH4L200N170M1-ND
Manufacturer
onsemi
Manufacturer Product Number
NVH4L200N170M1
Description
SILICON CARBIDE (SIC) MOSFET EL
Customer Reference
Detailed Description
N-Channel 1700 V 13A (Tc) 107W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Last Time Buy
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 20V
Vgs(th) (Max) @ Id
4.3V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
596 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
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Last Time Buy
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Last Time Buy Date: 7/5/2026