DRV5012 Digital-Latch Hall Effect Sensor

Texas Instruments' DRV5012 ultra-low-power digital-latch Hall effect sensor with a VCC range of 1.65 V to 5.5 V

Image of Texas Instruments' DRV5012 Digital-Latch Hall-Effect SensorTexas Instruments' DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate.

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature allows systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

  • Industry-leading low-power consumption
  • Pin-selectable sampling rate:
    • SEL = low: 20 Hz using 1.3 µA (1.8 V)
    • SEL = high: 2.5 kHz using 142 µA (1.8 V)
  • 1.65 V to 5.5 V operating VCC range
  • High magnetic sensitivity: ±2 mT (typ.)
  • Robust hysteresis: 4 mT (typ.)
  • Push-pull CMOS output
  • Small and thin X2SON package
  • -40°C to +85°C operating temperature range
  • Incremental rotary encoding:
    • Motor speed
    • Mechanical travel
    • Fluid measurement
    • Knob turning
    • Wheel speed
  • Brushless DC motor sensors
  • Portable medical devices
  • E-locks, e-bikes, motorized blinds
  • Flow meters
  • Contactless activation

DRV5012 Digital-Latch Hall Effect Sensor

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
10001 - Factory Stock
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Published: 2018-01-03