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Split-Gate Technology MOSFETs

MCC’s split-gate technology MOSFETs are suitable for space-saving and high-efficiency requirements in applications

Image of MCC's Split-Gate Technology MosFET’sMicro Commercial Components' split-gate technology MOSFETs offer extremely low RDS(on) value and allow higher current density in smaller packages. This makes them suitable for space-saving and high-efficiency requirements in applications.

Split-Gate Advantages
  • Increases BVDSS
  • Higher N-doping in the drift region minimizes RDS(on)
  • Decreases QGD that reduces Miller charge coupling
  • Improved FOM reduces switching and conduction losses
  • Current SGT portfolio offering ranges from 30 V to 150 V rating and 1.5 mΩ lowest RDS(on) value in common packages
Features and Benefits
  • Wide range of LV MOSFET portfolio
  • Low RSP value (specific on-state resistance)
  • High efficiency
  • High quality
  • Fast delivery

Split-Gate Technology MOSFET's

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC80N10Y-TPN-CHANNEL MOSFET, DFN5060 PACKAG30000 - ImmediateView Details
N-CHANNEL MOSFET, SOT23-6L PACKASIL05N06-TPN-CHANNEL MOSFET, SOT23-6L PACKA2995 - ImmediateView Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC30N06Y-TPN-CHANNEL MOSFET, DFN5060 PACKAG5000 - ImmediateView Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC45N10Y-YPN-CHANNEL MOSFET, DFN5060 PACKAG0View Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC80N045Y-TPN-CHANNEL MOSFET, DFN5060 PACKAG30000 - ImmediateView Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC10H045Y-TPN-CHANNEL MOSFET, DFN5060 PACKAG0View Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC50N10Y-TPN-CHANNEL MOSFET, DFN5060 PACKAG30000 - ImmediateView Details
P-CHANNEL MOSFET, DPAK PACKAGEMCU60P06-TPP-CHANNEL MOSFET, DPAK PACKAGE4998 - ImmediateView Details
N-CHANNEL MOSFET, DFN5060 PACKAGMCAC85N06Y-TPN-CHANNEL MOSFET, DFN5060 PACKAG4998 - ImmediateView Details
Published: 2020-05-22