FET, MOSFET Arrays

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Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
836
In Stock
1 : $1.83000
Cut Tape (CT)
3,000 : $0.49414
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
2.1V @ 250µA, 1.9V @ 250µA
20nC @ 10V, 40nC @ 10V
820pF @ 15V, 1890pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
2,548
In Stock
1 : $1.87000
Cut Tape (CT)
3,000 : $0.50534
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
6.1mOhm @ 20A, 10V
2.1V @ 250µA
20nC @ 10V
920pF @ 15V
2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
11,743
In Stock
1 : $1.92000
Cut Tape (CT)
3,000 : $0.56457
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
2.1V @ 250µA, 1.9V @ 250µA
20nC @ 10V, 52nC @ 10V
820pF @ 15V, 2555pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
0
In Stock
Check Lead Time
3,000 : $0.50534
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
30nC @ 10V, 42nC @ 10V
1000pF @ 15V, 1930pF @ 15V
2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
0
In Stock
Check Lead Time
3,000 : $0.56457
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
20A (Ta), 51A (Tc), 30A (Ta), 85A (Tc)
5.2mOhm @ 20A, 10V
2.2V @ 250µA
30nC @ 10V
1000pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 44.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
0
In Stock
Active
-
-
Tape & Reel (TR)
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
30nC @ 10V, 40nC @ 10V
1000pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
Showing
of 6

FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.