N-Channel Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
HUF76143P3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	108,627 Marketplace	293 : $1.02000 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	5.5mOhm @ 75A, 10V	3V @ 250µA	114 nC @ 10 V	±20V	3900 pF @ 25 V	-	225W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
FDU6692 N-CHANNEL POWER MOSFET Fairchild Semiconductor	62,804 Marketplace	190 : $1.58000 Bulk	-	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	54A (Ta)	4.5V, 10V	12mOhm @ 14A, 10V	3V @ 250µA	25 nC @ 5 V	±16V	2164 pF @ 15 V	-	1.6W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPAK
FDP8880 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	59,064 Marketplace	391 : $0.77000 Bulk	-	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta), 54A (Tc)	4.5V, 10V	11.6mOhm @ 40A, 10V	2.5V @ 250µA	29 nC @ 10 V	±20V	1240 pF @ 15 V	-	55W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
FDU6644 N-CHANNEL POWER MOSFET Fairchild Semiconductor	39,382 Marketplace	179 : $1.68000 Bulk	-	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	67A (Ta)	4.5V, 10V	8.5mOhm @ 16A, 10V	3V @ 250µA	35 nC @ 5 V	±16V	3087 pF @ 15 V	-	1.6W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPAK
IRLU024NPBF MOSFET N-CH 55V 17A IPAK Infineon Technologies	37,804 In Stock	1 : $1.38000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	4V, 10V	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	480 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
RFD16N05L N-CHANNEL POWER MOSFET Harris Corporation	32,485 Marketplace	175 : $1.71000 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50 V	16A (Tc)	4V, 5V	47mOhm @ 16A, 5V	2V @ 250mA	80 nC @ 10 V	±10V	-	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
HUF76121P3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	26,402 Marketplace	478 : $0.63000 Bulk	-	UltraFET™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	47A (Tc)	4.5V, 10V	21mOhm @ 47A, 10V	3V @ 250µA	30 nC @ 10 V	±20V	850 pF @ 25 V	-	75W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
HUF76129P3 N-CHANNEL POWER MOSFET Harris Corporation	24,454 Marketplace	249 : $1.21000 Bulk	-	UltraFET™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	56A (Tc)	4.5V, 10V	16mOhm @ 56A, 10V	3V @ 250µA	45 nC @ 10 V	±20V	1350 pF @ 25 V	-	105W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
BTS132E3129NKSA1 BTS132 - N-CHANNEL TEMPFET Infineon Technologies	23,500 Marketplace	54 : $5.55000 Bulk	-	TEMPFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	24A (Tc)	4.5V	65mOhm @ 12A, 4.5V	2.5V @ 1mA	-	±20V	1400 pF @ 25 V	-	75W	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
AUIRL1404Z MOSFET N-CH 40V 160A TO220 International Rectifier	22,462 Marketplace	152 : $1.98000 Bulk	-	HEXFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	4.5V, 10V	3.1mOhm @ 75A, 10V	2.7V @ 250µA	110 nC @ 5 V	±16V	5080 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220	TO-220-3
FDP6676 N-CHANNEL POWER MOSFET Fairchild Semiconductor	20,082 Marketplace	209 : $1.44000 Bulk	-	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	84A (Ta)	4.5V, 10V	6mOhm @ 42A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	5324 pF @ 15 V	-	93W (Tc)	-65°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	19,065 In Stock	1 : $1.78000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRL540NPBF MOSFET N-CH 100V 36A TO220AB Infineon Technologies	17,566 In Stock	1 : $1.99000 Tube	-	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	36A (Tc)	4V, 10V	44mOhm @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	1800 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TSM900N06CH X0G MOSFET N-CHANNEL 60V 11A TO251 Taiwan Semiconductor Corporation	15,402 In Stock	1 : $0.99000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	11A (Tc)	4.5V, 10V	90mOhm @ 6A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	500 pF @ 15 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPAK
ISL9N315AD3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	15,230 Marketplace	568 : $0.53000 Bulk	-	UltraFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	15mOhm @ 30A, 10V	3V @ 250µA	28 nC @ 10 V	±20V	900 pF @ 15 V	-	55W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
FDP8860 POWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor	14,977 Marketplace	162 : $1.85000 Bulk	-	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2.5mOhm @ 80A, 10V	2.5V @ 250µA	222 nC @ 10 V	±20V	12240 pF @ 15 V	-	254W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
RFP12N06RLE N-CHANNEL POWER MOSFET Harris Corporation	13,334 Marketplace	343 : $0.88000 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	18A (Tc)	4.5V, 10V	63mOhm @ 18A, 10V	3V @ 250µA	15 nC @ 10 V	±16V	485 pF @ 25 V	-	49W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IPP096N03LGHKSA1 N-CHANNEL POWER MOSFET Infineon Technologies	13,100 Marketplace	567 : $0.53000 Bulk	-	OptiMOS™ 3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	35A (Tc)	4.5V, 10V	9.6mOhm @ 30A, 10V	2.2V @ 250µA	15 nC @ 10 V	±20V	1600 pF @ 15 V	-	42W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
HUF76137P3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	13,040 Marketplace	224 : $1.34000 Bulk	-	UltraFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	9mOhm @ 75A, 10V	3V @ 250µA	72 nC @ 10 V	±20V	2100 pF @ 25 V	-	145W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
HUF76139P3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	12,841 Marketplace	200 : $1.50000 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	7.5mOhm @ 75A, 10V	3V @ 250µA	78 nC @ 10 V	±20V	2700 pF @ 25 V	-	165W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
CSD18533KCS MOSFET N-CH 60V 72A/100A TO220-3 Texas Instruments	12,584 In Stock	1 : $2.30000 Tube	-	NexFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	72A (Ta), 100A (Tc)	4.5V, 10V	6.3mOhm @ 75A, 10V	2.3V @ 250µA	34 nC @ 10 V	±20V	3025 pF @ 30 V	-	192W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IPP114N03LGHKSA1 N-CHANNEL POWER MOSFET Infineon Technologies	12,496 Marketplace	472 : $0.64000 Bulk	-	OptiMOS™ 3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	11.4mOhm @ 30A, 10V	2.2V @ 250µA	14 nC @ 10 V	±20V	1500 pF @ 15 V	-	38W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
FDP8440 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	11,109 Marketplace	105 : $2.86000 Bulk	-	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	2.2mOhm @ 80A, 10V	3V @ 250µA	450 nC @ 10 V	±20V	24740 pF @ 25 V	-	306W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
NTP4813NLG MOSFET N-CH 30V 10.2A TO220AB onsemi	0 In Stock 11,050 Marketplace	11,050 : $0.05000 Tube	-	-	Tube Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	10.2A (Ta)	4.5V, 10V	13.1mOhm @ 20A, 10V	2.5V @ 250µA	17 nC @ 11.5 V	±20V	895 pF @ 12 V	-	2.4W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
ISL9N304AP3 N-CHANNEL POWER MOSFET Fairchild Semiconductor	10,611 Marketplace	313 : $0.96000 Bulk	-	UltraFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	4.5mOhm @ 75A, 10V	3V @ 250µA	105 nC @ 10 V	±20V	4075 pF @ 15 V	-	145W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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