JANTXV2N6766 Microsemi Corporation | Discrete Semiconductor Products

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JANTXV2N6766
DigiKey Part Number	150-JANTXV2N6766-ND
Manufacturer	Microsemi Corporation
Manufacturer Product Number	JANTXV2N6766
Description	MOSFET N-CH 200V 30A TO3
Customer Reference
Detailed Description	N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Microsemi Corporation
Series	-
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Military
Qualification	MIL-PRF-19500/543
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AE