Ultra-High-Efficiency U-MOS IX-H MOSFETs

Toshiba has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding 30 V, 40 V, and 60 V devices to the company’s existing lineup. All of the devices will be available in ultra-compact, TSON Advance, SOP Advance, and TO-220/TO-220-SIS package options that realize the low on-resistance and low Q_OSS for increased efficiency in switching-mode power supplies used in base stations, servers, or industrial equipment.

Comprising 30 V, 40 V, and 60 V devices, these N-channel MOSFETs are based on Toshiba’s new-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver ”best-in-class” efficiency across a wide range of load conditions by driving down on-resistance (R_DS(ON)) and improving switching efficiency by reducing output charge (Q_OSS).

The MOSFETs will help designers to reduce losses and board space in a variety of power management circuits including high-side and low-side switching in DC-DC conversion and secondary side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on lithium-ion (Li-ion) batteries.