DDR4 DRAM Components

Kingston's DRAM components are offered in a wide temperature range and with multiple data rates

Image of Kingston Technology's DDR4 DRAM Component Kingston Technology's DRAM components are designed to meet the needs of embedded devices and are available with low-voltage variants for reduced power consumption. Kingston DDR4 components are offered in an operating case temperature range of 0°C to +95°C for commercial temperature and -40°C to +95°C for industrial temperature. Package options are available in 78-ball FBGA and 96-ball FBGA and are also lead-free and halogen-free. Kingston's DDR4 components offer data rates of 3200 Mbps and 2666 Mbps.

Features

  • Double-data-rate architecture: two data transfers per clock cycle
  • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
  • Bidirectional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
  • DQS is edge-aligned with data for READs; center-aligned with data for WRITEs
  • Differential clock inputs (CK_t and CK_c)
  • DLL aligns DQ and DQS transitions with CK transitions
  • Data mask (DM) writes data-in at both the rising and falling edges of the data strobe
  • Write cycle redundancy code (CRC) is supported
  • Programmable preamble for read and write is supported
  • Programmable burst length 4/8 with both nibble sequential and interleave mode
  • BL switch on-the-fly
  • Driver strength selected by MRS
  • Dynamic on-die termination supported
  • Two termination states such as RTT_PARK and RTT_NOM switchable by ODT pin
  • Asynchronous RESET pin supported
  • ZQ calibration supported
  • Write levelization supported
  • In compliance with the RoHS directive
  • Internal VREF DQ level generation is available
  • Temperature-controlled auto refresh (TCAR) mode is supported
  • Low-power auto self-refresh (LP ASR) mode is supported
  • Command address (CA) parity (command/address) mode is supported
  • Per DRAM addressability (PDA)
  • Fine granularity refresh is supported
  • Geardown mode (1/2 rate and 1/4 rate) is supported
  • Self-refresh abort is supported
  • Maximum power-saving mode is supported
  • Banks grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • DMI pin support for write data masking and DBIdc functionality
Applications
  • Industrial IoT/robotics and factory automation
  • 5G networking/telecommunications communication modules (Wi-Fi routers and mesh devices)
  • Wearables: smart watches, health monitors, and AR/VR
  • Smart home: sound bars, thermostats, fitness equipment, vacuums, beds, and faucets
  • Smart city: HVAC, lighting, power monitoring/metering, and parking meters

DDR4 DRAM Components

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IC DRAM 8GBIT 96FBGAD5116AN9CXGRK-UIC DRAM 8GBIT 96FBGA0 - Immediate$8.38View Details
IC FLASH RAM 256GBIT MMC 254FBGA32EM16-M4CTX29-8AD11IC FLASH RAM 256GBIT MMC 254FBGA0 - Immediate$22.86View Details
Published: 2022-10-10