DDR4 DRAM Components
Kingston's DRAM components are offered in a wide temperature range and with multiple data rates
Kingston Technology's DRAM components are designed to meet the needs of embedded devices and are available with low-voltage variants for reduced power consumption. Kingston DDR4 components are offered in an operating case temperature range of 0°C to +95°C for commercial temperature and -40°C to +95°C for industrial temperature. Package options are available in 78-ball FBGA and 96-ball FBGA and are also lead-free and halogen-free. Kingston's DDR4 components offer data rates of 3200 Mbps and 2666 Mbps.
Features
- Double-data-rate architecture: two data transfers per clock cycle
- The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
- Bidirectional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
- DQS is edge-aligned with data for READs; center-aligned with data for WRITEs
- Differential clock inputs (CK_t and CK_c)
- DLL aligns DQ and DQS transitions with CK transitions
- Data mask (DM) writes data-in at both the rising and falling edges of the data strobe
- Write cycle redundancy code (CRC) is supported
- Programmable preamble for read and write is supported
- Programmable burst length 4/8 with both nibble sequential and interleave mode
- BL switch on-the-fly
- Driver strength selected by MRS
- Dynamic on-die termination supported
- Two termination states such as RTT_PARK and RTT_NOM switchable by ODT pin
- Asynchronous RESET pin supported
- ZQ calibration supported
- Write levelization supported
- In compliance with the RoHS directive
- Internal VREF DQ level generation is available
- Temperature-controlled auto refresh (TCAR) mode is supported
- Low-power auto self-refresh (LP ASR) mode is supported
- Command address (CA) parity (command/address) mode is supported
- Per DRAM addressability (PDA)
- Fine granularity refresh is supported
- Geardown mode (1/2 rate and 1/4 rate) is supported
- Self-refresh abort is supported
- Maximum power-saving mode is supported
- Banks grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
- DMI pin support for write data masking and DBIdc functionality
- Industrial IoT/robotics and factory automation
- 5G networking/telecommunications communication modules (Wi-Fi routers and mesh devices)
- Wearables: smart watches, health monitors, and AR/VR
- Smart home: sound bars, thermostats, fitness equipment, vacuums, beds, and faucets
- Smart city: HVAC, lighting, power monitoring/metering, and parking meters
DDR4 DRAM Components
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
![]() | ![]() | D5116AN9CXGRK-U | IC DRAM 8GBIT 96FBGA | 0 - Immediate | $8.38 | View Details |
![]() | ![]() | 32EM16-M4CTX29-8AD11 | IC FLASH RAM 256GBIT MMC 254FBGA | 0 - Immediate | $22.86 | View Details |






