OPB703-05(WZ) - OPB70AWZ-HWZ Datasheet

TT Electronics/Optek Technology

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Datasheet

The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor,
mounted side-by-side on converging optical axes in a black plastic housing and are designed for PCBoard mounting. The
OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote mounting utilizing interconnect wires of UL
approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.
The OPB70AWZ consists of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Photodarlington, mounted side-by-
side on converging optical axes in a black plastic housing and is designed for remote mounting utilizing interconnect wires of UL
approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.
The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor
or Rbe Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for remote
mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.
Various lens options are available: No lens for the (OPB703, OPB703WZ), blue window for dust protection for the (OPB704,
OPB704WZ, OPB70BWZ, OPB70HWZ) and aperture lens for improved resolution for the (OPB705, OPB705WZ, OPB70AWZ,
OPB70CWZ, OPB70DWZ). The OPB704G and OPB704GWZ offers excellent protection for dirty environments.
The phototransistor responds to illumination from the emitter when a reflective object passes within the field of view centered
typically at 0.15” (3.8 mm).
Custom electrical, wire, cabling and
connectors are available. Contact
your local representative or OPTEK
for more information.
WZ
Version
RoHS
Ordering Information
Part LED Peak Detector Optical Cover Lead or Wire
OPB703
890 nm
Transistor
None
0.160" Leads
OPB703WZ 24" / 26 AWG Wire
OPB704 0.160" Leads
Blue
Window
OPB704WZ 24" / 26 AWG Wire
OPB70HWZ 24” / 26 AWG Wire
OPB704G 0.160" Leads
OPB704GWZ 24" / 26 AWG Wire
OPB705
Aperture
0.160" Leads
OPB705WZ
24" / 26 AWG Wire
OPB70AWZ Darlington
OPB70BWZ Rbe Transistor Blue Window
OPB70CWZ
640 nm
Rbe Transistor
Aperture
OPB70DWZ Transistor
OPB70EWZ Rbe Transistor
Clear Window
OPB70FWZ Transistor
OP- B703, OP-
1 4
2 3
OPB703, OPB704, OPB705
Anode Collector
Cath- Emitter
An- Collector
Cathode Emitter
Anode Collector
Emitter
Cathode
OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ
OPB704G
OPB704GWZ
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range -40°C to +80° C
Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240° C(1)
Input Diode
Forward DC Current 40 mA
Reverse DC Voltage 2 V
Power Dissipation 100 mW(2)
Output Photodetector
Collector-Emitter Voltage
Phototransistor
Photodarlington
30 V
15 V
Emitter-Collector Voltage 5 V
Collector DC Current 25 mA
Power Dissipation 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C above 25° C.
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.
(3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ,
and OPB70FWZ derate linearly 1.82 mW/° C above 25° C.
(4) The distance from the assembly face to the reflective surface is d.
(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata-
log # E 152 7795.
(7) All parameters tested using pulse techniques.
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA
V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Coupled
IC(ON)
On-State Collector Current
OPB70HWZ
OPB703, OPB703WZ
OPB704, OPB704WZ
0.60
0.30
0.20
-
-
-
3.5
2.5
2.5
mA
VCE = 5 V, IF = 40mA , d = 0.15” (4)(6)
OPB704G, OPB704GWZ 0.50 - 6.0 VCE = 5 V, IF = 40mA , d = 0.20” (4)(6)
ICX
Crosstalk
OPB703, OPB703WZ
OPB704, OPB704WZ, OPB70HWZ
-
-
-
-
20
20
µA
VCE = 5 V, IF = 40mA(5)
Notes:
(1) The distance from the assembly face to the reflective surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,
Catalog # E 152 7795.
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70AWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output PhotoDarlington (See OP535 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 15 - - V ICE = 1.0 mA, EE =0
V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA, EE =0
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Coupled
IC(ON)
On-State Collector Current 5.0 - 26.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)
V(SAT)
Saturation Voltage - - 1.15 V IC = 400 µA, IF = 40mA , d = 0.15” (1)(3)
ICX
Crosstalk - - 25 µA VCE = 5 V, IF = 40mA(2)
Notes:
(1) The distance from the assembly face to the reflective surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata-
log # E 152 7795.
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70BWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP705 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA
V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA
ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0
Coupled
IC(ON)
On-State Collector Current
OPB70BWZ 0.50 - 3.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)
ICX
Crosstalk
OPB70BWZ - - 5 µA VCE = 5 V, IF = 40mA(2)
Notes:
(1) The distance from the assembly face to the reflective surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,
Catalog # E 152 7795.
Coupled
IC(ON)
On-State Collector Cur-
rent
OPB70CWZ .10 - 1.0
mA VCE = 5 V, IF = 40mA , d = 0.15” (21(3)
OPB70EWZ .25 - 2.5
V(SAT)
Saturation Voltage - - 0.4 V IC = 100 µA, IF = 40mA , d = 0.15” (1)(3)
ICX
- - 2 µA VCE = 5 V, IF = 40mA(2) Crosstalk
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70CWZ and OPB70EWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OVLAS6CB8 for additional information — for reference only)
VF Forward Voltage - - 2.6 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0
V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA, IF = 0, EE =0
ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0
Notes:
(1) The distance from the assembly face to the reflective surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,
Catalog # E 152 7795.
Coupled
IC(ON)
On-State Collector Cur-
rent
OPB70DWZ .10 - 1.5
mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)
OPB70FWZ .25 - 3.5
V(SAT)
Saturation Voltage - - 0.4 V IC(ON) = 100 µA, IF = 40mA , d = 0.15” (1)(3)
ICX
- - 5.0 µA VCE = 5 V, IF = 40mA(2) Crosstalk
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70DWZ and OPB70FWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OVLAS6CB8 for additional information — for reference only)
VF Forward Voltage - - 2.6 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0
V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IEC = 100µA, IF = 0, EE =0
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Forward Voltage vs Forward Current vs Temp
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20 25 30 35 40
Forward Current (mA)
Typical Forward Voltage
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
Normalized Forward Current at 20 mA and 20° C
OPB705 - Output vs Distance
Distance (inches)
Normalized Output
Kodak 90%
Kodak 19%
Copier Paper
Avery Labels
Retro Reflective
Normalized at IF = 40 mA
Distance = 0.15" & Kodak 90%
OPB703 - Output vs Distance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Distance (inches)
Normalized Output
Kodak 90%
Kodak 19%
Avery
Corporate
Retro Reflective
Normalized at IF = 40 mA
Distance = 0.15" & Kodak 90%
OPB704 - Output vs Distance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Distance (inches)
Normalized Output
Kodak 90%
Kodak 19%
Copier Paper
Avery Label
Retro Reflective
Normalized at IF = 40 mA
Distance = 0.15" & Kodak 90%

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