OPB703-05(WZ). OPB70AWZ-HWZ Datasheet by TT Electronics/Optek Technology

Datasheet Feedback/Errors

Reflective Obiect Sensor OPB703 through OPB705, @ Electronics OPB703WZ through OPB705WZ, OPB7OAWZ through OPB70HWZ ,1 Features: Phototransrstor output Hugh sensrtrvrty Lochast plastic housrng Available WIth tenses for dust protectron and ambient Irght ﬁttratian Focused for maxrmum sensrtrvrty Descriptlan: Applications: Nonrcantact reﬂectwe object sensor Assemb‘y Hne automation Machine automation Machine safety End of trave‘ sensor Door sensor Mark Detectron Ofﬁce Equrpment ® Generat Nate oprrx Tezhnatogy‘ rue TT Ereerromrs reser ves the rrghr to make changes to uroduzt spetrﬁcatron Mthnat noun: or habrhty Ar hrurmmmn rs sumcd to W Ereerrumes' own data and rs ““5 WOW” ”"VE‘»$“VQ°§‘QM§ ngo‘wwgeﬁgﬁfﬂ zonsrdered accurate at trme or garng to prmt ‘ ” ©TT eteztromzspk IssueF 06/2015 Puget

The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor,

mounted side-by-side on converging optical axes in a black plastic housing and are designed for PCBoard mounting. The

OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote mounting utilizing interconnect wires of UL

approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.

The OPB70AWZ consists of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Photodarlington, mounted side-by-

side on converging optical axes in a black plastic housing and is designed for remote mounting utilizing interconnect wires of UL

approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.

The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor

or Rbe Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for remote

mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.

Various lens options are available: No lens for the (OPB703, OPB703WZ), blue window for dust protection for the (OPB704,

OPB704WZ, OPB70BWZ, OPB70HWZ) and aperture lens for improved resolution for the (OPB705, OPB705WZ, OPB70AWZ,

OPB70CWZ, OPB70DWZ). The OPB704G and OPB704GWZ offers excellent protection for dirty environments.

The phototransistor responds to illumination from the emitter when a reflective object passes within the field of view centered

typically at 0.15” (3.8 mm).

Custom electrical, wire, cabling and

connectors are available. Contact

your local representative or OPTEK

for more information.



Version

RoHS

Ordering Information

Part LED Peak Detector Optical Cover Lead or Wire

OPB703

890 nm

Transistor

None

0.160" Leads

OPB703WZ 24" / 26 AWG Wire

OPB704 0.160" Leads

Blue

Window

OPB704WZ 24" / 26 AWG Wire

OPB70HWZ 24” / 26 AWG Wire

OPB704G 0.160" Leads

OPB704GWZ 24" / 26 AWG Wire

OPB705

Aperture

0.160" Leads

OPB705WZ

24" / 26 AWG Wire

OPB70AWZ Darlington

OPB70BWZ Rbe Transistor Blue Window

OPB70CWZ

640 nm

Rbe Transistor

Aperture

OPB70DWZ Transistor

OPB70EWZ Rbe Transistor

Clear Window

OPB70FWZ Transistor

Reflective Obiect Sensor . OPB703 through 0PB705, @ Electronics OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ 4X — —— 4x as ISO [0.5m I3] [me 2x 33203305 [“1 [5‘] - l7] - was 200 4» * [25] 275 L"11\= ' 31%;:ng , , 2 * PINNO PUNCTION ._ f [17.5] s B [v.4] ; 61333505 Jun .370 » 3 EMmER 3 K / E E E ; couscvorz 5.5] , 5% 220 ‘ J [10.7] , [$53)] .420 {40M [152] ,auu [21v] .900 mm W TOLERANCE ARE: OIOUNLESS THERWISESPEC‘FIED. V ‘A x sumcs 3? —r was COLOR FUNCHON " [v a] [7] _ [5 v] -| m m X‘ mews “7-“ 3‘ E‘ E— M awash 700 n 370 aLuE mm k“ / a E E4 [5.5] _ /i 220 J J [13] [m7] ' Jéi‘ ‘20 [15,2] .600 [22.9] 300 mmmsons ARE IN wanes [MM VOLERANCES ARE : .am amass mzxwxss spscmsn Genevm Nate omx Terhna‘ogy‘ M W E‘edromts vesew ves the ngm m make changes m uroduzt speumahon mum noun: or mum Au mfurmntmn ‘5 mm to TT E‘Ktrumzs' own data and \s ““5 WOW” ”"VE‘»$“VQ°§‘QM§ ngo‘wwgeﬁgﬁfﬂ {onsmeved accurate at me oi gamg to punt ‘ W (3 TT e‘edromzs pk IssueF 06/2015 Page 2

OP- B703, OP-

1 4

2 3

OPB703, OPB704, OPB705

Anode Collector

Cath- Emitter

An- Collector

Cathode Emitter

Anode Collector

Emitter

Cathode

OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ

Reflective Obiect Sensor . OPB703 through 0PB705, @ ElectronIcs OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ _, [I585] ._ .624 [5.99] [8.86] .275 .349 [4 ] [508] 2.92 . 4» f 5.08 .05 .200 [200] MIN NOM. ‘HNNo, ruIIcIIoN [5.59] 7 I * \ '2 éﬁﬁnéog 220 2: 3 EMIIIER \ A COILEcIoR £23 *> “7-781 2 I / ’ .700 2x J A ‘ / % a! [1'59] REFLECTIVE I 3 Ross SURFACE NOM- __ No.67] __ 420 DIMENSIONS ARE IN INCHES [MM] [£8 13] [2347] TOLERANCES ARE : .O]O UNLESS OTHERWISE SPECIFIED. u' 025:.005 ,924 _. [I585] ‘_ .624 [6.99] [8.86] .275 .34? 4x WIRES 26AWG [5-08] [5.08] 24“ MIN. 300 200 — NOM, - wazcoIon ruNcnoN ORANGE ANODE GREEN cmoog mus mm WHITE coLLEcIoR - [I778] ,> .700 GR¥N WHIIE REFLECTIVE omog mug SURFACE DIMENSIONS ARE IN INCHES [MM] TOLERANCES ARE : .OIO UNLESS OTHERWISE SPECIFIED. (Ia-om m. WEI-z II ”(shew I.IIIg~-.III I:dIII pr .IEIIIV, A HoTTEItdrc eIe a .II .I I IIt g.IIgIoI)I III (II an I- .I.IIII-I: 310mm; IoIIr. II Ix I» p:;III-( II kw r 00 20M) 0.qu 1 II\p<>

OPB704G

OPB704GWZ

Reflective Obiect Sensor . OPB703 through OPB705, @Electromcs OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ Geneva‘ Nate TT Hemomu veserves the nghuo make (ﬂanges m mum spenﬁmuon wuhou: name or llubmty All Informutmn \s sumac! to W E‘mrumts' own data and \s zonswdeved camera at time o! gomg to punt omk Tedmo‘oqy‘ m was Wul\u(e Duve‘ CarroHlon, 1x 7500mm. .1 972 323 2200 www optekmcom‘ www lte‘eztvoms (om (6 TT e‘emomzs pk IssueF 06/2015 Page A

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Storage Temperature Range -40°C to +80° C

Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240° C(1)

Input Diode

Forward DC Current 40 mA

Reverse DC Voltage 2 V

Power Dissipation 100 mW(2)

Output Photodetector

Collector-Emitter Voltage

Phototransistor

Photodarlington

30 V

15 V

Emitter-Collector Voltage 5 V

Collector DC Current 25 mA

Power Dissipation 100 mW(2)

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C above 25° C.

Reflective Obiect Sensor . OPB703 through OPB705, @Electromcs OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ Geneva‘ Nate TT Hemoms veserves the nghuo make (ﬂanges m mam spenﬁwuon wuhom Home or llabmty All Informutmn \s sumac! to W E‘mrumts' own data and \s zonswdeved acmmre m time o! gomg to punt omx Terhno‘oqy‘ m was Wul\u(e mm CarroHlan,TX 7500mm .1972 323 2200 www optekmuom‘ www lte‘emoms (om (6 TT e‘emomzs pk IssueF 06/2015 Page 5

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.

(3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ,

and OPB70FWZ derate linearly 1.82 mW/° C above 25° C.

(4) The distance from the assembly face to the reflective surface is d.

(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata-

log # E 152 7795.

(7) All parameters tested using pulse techniques.

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode (See OP265 for additional information — for reference only)

VF Forward Voltage - - 1.7 V IF = 40mA

IR Reverse Current - - 100 µA VR = 2 V

Output Phototransistor (See OP505 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA

V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA

ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0

Coupled

IC(ON)

On-State Collector Current

OPB70HWZ

OPB703, OPB703WZ

OPB704, OPB704WZ

0.60

0.30

0.20

3.5

2.5

VCE = 5 V, IF = 40mA , d = 0.15” (4)(6)

OPB704G, OPB704GWZ 0.50 - 6.0 VCE = 5 V, IF = 40mA , d = 0.20” (4)(6)

ICX

Crosstalk

OPB703, OPB703WZ

OPB704, OPB704WZ, OPB70HWZ

µA

VCE = 5 V, IF = 40mA(5)

Notes:

(1) The distance from the assembly face to the reflective surface is d.

(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,

Catalog # E 152 7795.

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB70AWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode (See OP265 for additional information — for reference only)

VF Forward Voltage - - 1.7 V IF = 40mA

IR Reverse Current - - 100 µA VR = 2 V

Output PhotoDarlington (See OP535 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage 15 - - V ICE = 1.0 mA, EE =0

V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA, EE =0

ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0

Coupled

IC(ON)

On-State Collector Current 5.0 - 26.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)

V(SAT)

Saturation Voltage - - 1.15 V IC = 400 µA, IF = 40mA , d = 0.15” (1)(3)

ICX

Crosstalk - - 25 µA VCE = 5 V, IF = 40mA(2)

Notes:

(1) The distance from the assembly face to the reflective surface is d.

(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata-

log # E 152 7795.

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB70BWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode (See OP265 for additional information — for reference only)

VF Forward Voltage - - 1.7 V IF = 40mA

IR Reverse Current - - 100 µA VR = 2 V

Output Phototransistor (See OP705 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA

V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA

ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0

Coupled

IC(ON)

On-State Collector Current

OPB70BWZ 0.50 - 3.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)

ICX

Crosstalk

OPB70BWZ - - 5 µA VCE = 5 V, IF = 40mA(2)

Notes:

(1) The distance from the assembly face to the reflective surface is d.

(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,

Catalog # E 152 7795.

Coupled

IC(ON)

On-State Collector Cur-

rent

OPB70CWZ .10 - 1.0

mA VCE = 5 V, IF = 40mA , d = 0.15” (21(3)

OPB70EWZ .25 - 2.5

V(SAT)

Saturation Voltage - - 0.4 V IC = 100 µA, IF = 40mA , d = 0.15” (1)(3)

ICX

- - 2 µA VCE = 5 V, IF = 40mA(2) Crosstalk

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB70CWZ and OPB70EWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode (See OVLAS6CB8 for additional information — for reference only)

VF Forward Voltage - - 2.6 V IF = 40mA

IR Reverse Current - - 100 µA VR = 2 V

Output Phototransistor (See OP505 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0

V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA, IF = 0, EE =0

ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0

Reflective Obiect Sensor . OPB703 through OPB705, @ Electronics OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ Geneva‘ Nate TT Hemoms veserves the nghuo make (ﬂanges m mam spenﬁcauon wuhom Home or llabmty All Informutmn \s sumac! to W E‘mrumts' own data and \s zonswdeved accurate m time o! gomg to punt omx Terhno‘oqy‘ m was Wul\u(e mm CarroHlan,TX 7500mm .1972 323 2200 www optekmuom‘ www lte‘emams (om to TT e‘emomzs pk IssueF 06/2015 Page 9

Notes:

(1) The distance from the assembly face to the reflective surface is d.

(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,

Catalog # E 152 7795.

Coupled

IC(ON)

On-State Collector Cur-

rent

OPB70DWZ .10 - 1.5

mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)

OPB70FWZ .25 - 3.5

V(SAT)

Saturation Voltage - - 0.4 V IC(ON) = 100 µA, IF = 40mA , d = 0.15” (1)(3)

ICX

- - 5.0 µA VCE = 5 V, IF = 40mA(2) Crosstalk

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB70DWZ and OPB70FWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode (See OVLAS6CB8 for additional information — for reference only)

VF Forward Voltage - - 2.6 V IF = 40mA

IR Reverse Current - - 100 µA VR = 2 V

Output Phototransistor (See OP505 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0

V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IEC = 100µA, IF = 0, EE =0

ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0

Reflective ObiecI Sensor . OPB703 through OPB705, @Electromcs OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ / \ E , // = I / \ // \ \ j \\\\: \ \ \ \ \ / E , 4 \ f‘ J éStu—u—

Forward Voltage vs Forward Current vs Temp

0.6

0.8

1.0

1.2

1.4

1.6

0 5 10 15 20 25 30 35 40

Forward Current (mA)

Typical Forward Voltage

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

Normalized Forward Current at 20 mA and 20° C

OPB705 - Output vs Distance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Distance (inches)

Normalized Output

Kodak 90%

Kodak 19%

Copier Paper

Avery Labels

Retro Reflective

Normalized at IF = 40 mA

Distance = 0.15" & Kodak 90%

OPB703 - Output vs Distance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Distance (inches)

Normalized Output

Kodak 90%

Kodak 19%

Avery

Corporate

Retro Reflective

Normalized at IF = 40 mA

Distance = 0.15" & Kodak 90%

OPB704 - Output vs Distance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Distance (inches)

Normalized Output

Kodak 90%

Kodak 19%

Copier Paper

Avery Label

Retro Reflective

Normalized at IF = 40 mA

Distance = 0.15" & Kodak 90%

ICS @ Electron Obiect Sensor Reflective OPB703 through OPB705, OPB703WZ through OPB705WZ, OPB7OAWZ through OPB7OHWZ oPB7MGwz Normaliled Collector Current vs Object Distance ‘2 528 35.555: n.n 1.: 2.5 n 54 «.3 75 m 1a.: 1m 121 m 2a.: Distance (mm) rm Wmo e :‘u

OPB703-05(WZ). OPB70AWZ-HWZ Datasheet by TT Electronics/Optek Technology

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