EPC9014: 4A, 0 ~ 200V, Half H-Bridge

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2019 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9014 development board is 2” x 1.5” and contains not only two EPC2019* eGaN FET in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2019* eGaN FET please refer to the datasheet. The datasheet should be read in conjunction with this quick start guide.

* Status: New Device Offered (NDO)

The GaN Experts recommend EPC2054 for new designs

NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.