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Designs (30)

30 Results - Page 1/3 |< < 1 2 3 > >|

EPC9005C: 7A, 0 ~ 40V, Half H-Bridge Driver

Manufacturer: EPC

The EPC9005C development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives

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EPC9017: 20A, 0 ~ 100V, Half Bridge

Manufacturer: EPC

The EPC9017 development board is 2” x 1.5” and features three EPC2001 eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver.

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EPC9201: 40A, 0 ~ 20V, Half H-Bridge Driver

Manufacturer: EPC

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

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EPC9203: 20A, 0 ~ 60V, Half H-Bridge Driver

Manufacturer: EPC

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

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EPC9004C: 2A, 0 ~ 200V, Half Bridge

Manufacturer: EPC

The EPC9004C development board is a 200 V maximum device voltage, 2 A maximum output current, half bridge with onboard gate drives, featuring the EPC2012C enhancement mode (eGaN®) field effect transistor (FET).

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EPC9061: 24A, 0 ~ 60V, Half H-Bridge

Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors (FETs).

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EPC9050 : 2.5A, 0 ~ 80V, Half Bridge

Manufacturer: EPC

This development board is in a half bridge topology with onboard gate drives, featuring the EPC2035/36 eGaN® field effect transistors

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EPC9055: 3A, 0 ~ 100V, Half H-Bridge Driver

Manufacturer: EPC

This development board is in a monolithic half bridge topology with onboard gate drives, featuring the EPC2106 eGaN

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EPC9059: 50A, 0 ~ 20V, Half Bridge

Manufacturer: EPC

The EPC9059 20V development board features two 30V EPC2100 eGaNICs (Enhancement-mode Gallium Nitride Integrated Circuits) operating in parallel with a single onboard gate drive to achieve higher output currents.

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EPC9085: 20A, 0 ~ 40V, Half H-Bridge

Manufacturer: EPC

The EPC9085 development board is a 40 V maximum device voltage, 20 A maximum output current, half bridge with onboard gate drives, featuring the EPC2049 enhancement mode (eGaN) field effect transistor (FET).

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30 Results - Page 1/3 |< < 1 2 3 > >|