EPC9006C: 7A, 0 ~ 100V, Half Bridge


The EPC9006C development board is a 100V maximum device voltage, 7A maximum output current, half bridge with onboard gate drives, featuring the EPC2007C enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2007C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9006C development board is 2” x 1.5” and contains two EPC2007C eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2007Cs eGaN FET please refer to the datasheet. The datasheet should be read in conjunction with this quick start guide.


Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1128-ND
Eval Board Supplier EPC
Eval Board Normally In Stock
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 100 V
Current Out 7 A
Interface PWM, Dual
Features Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
Switching Frequency (Max) Not given
Component Count + Extras 29 + 7
Design Author EPC
Main I.C. Base Part EPC2007C
Date Created By Author 2016-01
Date Added To Library 2017-08

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