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EPC9060: 25A, 0 ~ 40V, Half H-Bridge Driver

Summary

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2" x 2" and contains two eGaN FETs in a half-bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance and has additional area to add buck output filter components on the board.

There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1122-ND
Eval Board Supplier EPC
Eval Board Normally In Stock
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 40 V
Current Out 25 A
Interface PWM, Dual
Features
Switching Frequency (Max) Not given
Component Count + Extras 28 + 16
Design Author EPC
Main I.C. Base Part EPC2030
Date Created By Author 2015-10
Date Added To Library 2017-04

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