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IPT059N15N3
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPT059N15N3ATMA1 Datasheet IPT059N15N3ATMA1 - Infineon Technologies IPT059N15N3ATMA1TR-ND MOSFET N-CH 150V 155A 8HSOF 0
Standard Lead Time 20 Weeks
$3.68568 2,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150V 155A (Tc) 8V, 10V 4V @ 270µA 92nC @ 10V ±20V 7200pF @ 75V
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375W (Tc) 5.9 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
IPT059N15N3ATMA1 Datasheet IPT059N15N3ATMA1 - Infineon Technologies IPT059N15N3ATMA1CT-ND MOSFET N-CH 150V 155A 8HSOF 0
Standard Lead Time 20 Weeks
$7.30000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150V 155A (Tc) 8V, 10V 4V @ 270µA 92nC @ 10V ±20V 7200pF @ 75V
-
375W (Tc) 5.9 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
IPT059N15N3ATMA1 Datasheet IPT059N15N3ATMA1 - Infineon Technologies IPT059N15N3ATMA1DKR-ND MOSFET N-CH 150V 155A 8HSOF 0
Standard Lead Time 20 Weeks
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150V 155A (Tc) 8V, 10V 4V @ 270µA 92nC @ 10V ±20V 7200pF @ 75V
-
375W (Tc) 5.9 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
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02:36:36 2/19/2018