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2SA2169-E Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP
Price & Procurement
959 In Stock
Can ship immediately Factory Stock : 14,000
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.91000 $0.91
10 0.79900 $7.99
25 0.75080 $18.77
100 0.54500 $54.50
500 0.45534 $227.67
1,000 0.38752 $387.52
2,500 0.36330 $908.25
5,000 0.32697 $1,634.85

Submit a request for quotation on quantities greater than those displayed.

2SA2169-E

Datasheet
Digi-Key Part Number 2SA2169-EOS-ND
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Manufacturer

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Manufacturer Part Number 2SA2169-E
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Description TRANS PNP 50V 10A TP
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Detailed Description

Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP

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Documents & Media
Datasheets 2SA2169/2SC6017
Environmental Information Material Declaration 2SA2169-E
HTML Datasheet 2SA2169/2SC6017
Online Catalog PNP Transistors
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Bulk 
Part Status Not For New Designs
Transistor Type PNP
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 580mV @ 250mA, 5A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Power - Max 950mW
Frequency - Transition 130MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Part Number 2SA2169
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 500
Other Names 2SA2169-E-ND
2SA2169-EOS