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TP65H300G4LSG N-Channel 650V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)
Price & Procurement
61 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.66000 $3.66
10 3.28400 $32.84
25 3.10520 $77.63
100 2.48400 $248.40
500 2.20800 $1,104.00
1,000 1.89060 $1,890.60
2,500 1.86300 $4,657.50
5,000 1.69740 $8,487.00
9,000 1.65600 $14,904.00

Submit a request for quotation on quantities greater than those displayed.

TP65H300G4LSG

Datasheet
Digi-Key Part Number 1707-TP65H300G4LSG-ND
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Manufacturer

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Manufacturer Part Number TP65H300G4LSG
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Description GAN FET N-CH 650V PQFN
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Detailed Description

N-Channel 650V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)

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Documents & Media
Datasheets TP65H300G4LSG
Featured Product TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
Online Catalog GaNFET (Gallium Nitride)
Product Attributes
Type Description Select All
Categories
Manufacturer Transphorm
Series -
Packaging Tray 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V
Rds On (Max) @ Id, Vgs 312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 8V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
FET Feature -
Power Dissipation (Max) 21W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerDFN
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 3 (168 Hours)
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Additional Resources
Standard Package 60
Other Names 1707-TP65H300G4LSG