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EPC2107 Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
In Stock: 446
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.83000 $1.83
10 1.64300 $16.43
25 1.55000 $38.75
100 1.20900 $120.90
250 1.17800 $294.50

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Alternate Package
  • Tape & Reel (TR)  : 917-1168-2-ND
  • Minimum Quantity: 2,500  Non-Stock 
  • Quantity Available: 0
  • Unit Price: $0.85560

EPC2107

Datasheet
Digi-Key Part Number 917-1168-1-ND
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Manufacturer

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Manufacturer Part Number EPC2107
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Description GANFET 3 N-CH 100V 9BGA
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Detailed Description

Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)

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Documents & Media
Datasheets EPC2107
Featured Product Wireless Power Solutions
GaN ICs for Wireless Power
Reference Design Library EPC9114(#1): 10W, Class 2, Rezence (A4WP) Compatible
PCN Assembly/Origin EPC2/EPC8 15/Jun/2018
Product Attributes
Type Description Select All
Categories
Manufacturer EPC
Series eGaN®
Packaging Cut Tape (CT) 
Part Status Discontinued at Digi-Key
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA
Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 9-VFBGA
Supplier Device Package 9-BGA (1.35x1.35)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 917-1168-1