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TP65H070LDG N-Channel 650V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
Price & Procurement
917 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 11.80000 $11.80
10 10.84700 $108.47
25 10.39720 $259.93
100 8.99200 $899.20
500 8.14900 $4,074.50
1,000 7.47460 $7,474.60
2,500 7.02500 $17,562.50
5,000 6.74400 $33,720.00

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TP65H070LDG

Datasheet
Digi-Key Part Number TP65H070LDG-ND
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Manufacturer

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Manufacturer Part Number TP65H070LDG
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Description 650 V 25 A GAN FET
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 650V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

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Documents & Media
Datasheets TP65H070L Datasheet
Reference Design Library TDHBG1200DC100-KIT: 1.2 kW Half-Bridge Buck 2:1 or Boost 1:2
Online Catalog GaNFET (Gallium Nitride)
Product Attributes
Type Description Select All
Categories
Manufacturer Transphorm
Series TP65H070L
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 400V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerDFN
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 3 (168 Hours)
California Prop 65
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Additional Resources
Standard Package 60