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SQJ200EP-T1_GE3 Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Price & Procurement
597 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.95000 $0.95
10 0.85000 $8.50
25 0.80640 $20.16
100 0.60480 $60.48
250 0.59904 $149.76
500 0.51264 $256.32
1,000 0.41760 $417.60
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Alternate Package
  • Tape & Reel (TR)  : SQJ200EP-T1_GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: $0.41184
  • Digi-Reel®  : SQJ200EP-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 597 - Immediate
  • Unit Price: Digi-Reel®

SQJ200EP-T1_GE3

Datasheet
Digi-Key Part Number SQJ200EP-T1_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQJ200EP-T1_GE3
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Description MOSFET 2N-CH 20V 20A/60A PPAK SO
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

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Documents & Media
Datasheets SQJ200EP
Featured Product SQJ200EP and SQJ202EP N-Channel TrenchFET Devices
Online Catalog N-Channel Standard FETs
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 20A, 60A
Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 10V
Power - Max 27W, 48W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SQJ200EP-T1_GE3CT