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SQD50N10-8M9L_GE3 N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
Price & Procurement
8,758 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.54000 $1.54
10 1.38100 $13.81
25 1.31040 $32.76
100 0.98280 $98.28
250 0.97344 $243.36
500 0.83304 $416.52
1,000 0.67860 $678.60

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQD50N10-8M9L_GE3TR-ND
  • Minimum Quantity: 2,000
  • Quantity Available: 6,000 - Immediate
  • Unit Price: $0.66924

SQD50N10-8M9L_GE3

Datasheet
Digi-Key Part Number SQD50N10-8M9L_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQD50N10-8M9L_GE3
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Description MOSFET N-CHAN 100V TO252
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252AA

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Documents & Media
Datasheets SQD50N10-8M9L
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number SQD50N
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQD50N10-8M9L_GE3CT