SQ2361AEES-T1_GE3 Vishay Siliconix | Discrete Semiconductor Products

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SQ2361AEES-T1_GE3 P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount

Product Overview

Digi-Key Part Number	SQ2361AEES-T1_GE3CT-ND	Copy
Quantity Available	0
Manufacturer	Vishay Siliconix	Copy
Manufacturer Part Number	SQ2361AEES-T1_GE3	Copy
Description	MOSFET P-CH 60V 2.5A SSOT23	Copy
Detailed Description	P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount	Copy

Documents & Media

Datasheets	SQ2361AEES
Online Catalog	P-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	170 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3