SISH410DN-T1-GE3 N-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Price & Procurement
7,180 In Stock
Can ship immediately

All prices are in USD.
Price Break Unit Price Extended Price
1 1.03000 $1.03
10 0.91700 $9.17
25 0.87080 $21.77
100 0.65310 $65.31
250 0.64688 $161.72
500 0.55358 $276.79
1,000 0.45095 $450.95
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Alternate Package
  • Tape & Reel (TR)  : SISH410DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 6,000 - Immediate
  • Unit Price: $0.44473
  • Digi-Reel®  : SISH410DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 7,180 - Immediate
  • Unit Price: Digi-Reel®


Digi-Key Part Number SISH410DN-T1-GE3CT-ND

Manufacturer Part Number SISH410DN-T1-GE3
Description MOSFET N-CHAN PPAK 1212-8SH
Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Documents & Media
Datasheets SISH410DN
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Part Number SISH41
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SISH410DN-T1-GE3CT