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SIS427EDN-T1-GE3 P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Price & Procurement
6,248 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.68000 $0.68
10 0.59400 $5.94
25 0.55800 $13.95
100 0.40500 $40.50
250 0.39060 $97.65
500 0.33840 $169.20
1,000 0.28800 $288.00
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SIS427EDN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.27000
  • Digi-Reel®  : SIS427EDN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 6,248 - Immediate
  • Unit Price: Digi-Reel®

SIS427EDN-T1-GE3

Datasheet
Digi-Key Part Number SIS427EDN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SIS427EDN-T1-GE3
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Description MOSFET P-CH 30V 50A 1212-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1930pF @ 15V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Part Number SIS427
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIS427EDN-T1-GE3CT