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Product Overview
Digi-Key Part Number SIHG21N65EF-GE3-ND
Quantity Available 497
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 650V 21A TO-247AC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 46 Weeks
Detailed Description

N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC

Documents & Media
Datasheets SIHG21N65EF
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Mult Devices 18/Aug/2017
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Vishay Siliconix
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Additional Resources
Standard Package ? 25

06:10:44 3/22/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 5.94000 $5.94
10 5.30800 $53.08
100 4.35220 $435.22
500 3.52418 $1,762.09
1,000 2.97220 $2,972.20

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