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SIHG20N50C-E3 N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-247AC
Price & Procurement
15,494 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.89000 $2.89
10 2.59400 $25.94
25 2.45240 $61.31
100 1.96200 $196.20
250 1.85300 $463.25
500 1.74400 $872.00
1,000 1.49330 $1,493.30
2,500 1.47150 $3,678.75
5,000 1.34070 $6,703.50
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SIHG20N50C-E3

Datasheet
Digi-Key Part Number SIHG20N50C-E3-ND
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Manufacturer

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Manufacturer Part Number SIHG20N50C-E3
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Description MOSFET N-CH 500V 20A TO247
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Detailed Description

N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-247AC

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Documents & Media
Datasheets SIHG20N50C
Video File MOSFET Technologies for Power Conversion
Featured Product SiHP18N50C/SiHG20N50C MOSFETs
PCN Assembly/Origin Mult Devices 18/Aug/2017
PCN Packaging Packing Tube Design 19/Sep/2019
HTML Datasheet SIHG20N50C
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2942pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Part Number SIHG20
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 500
Other Names SIHG20N50CE3