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SI8800EDB-T2-E1 N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Price & Procurement
27,369 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.44000 $0.44
10 0.38000 $3.80
25 0.35440 $8.86
100 0.26340 $26.34
250 0.25020 $62.55
500 0.20564 $102.82
1,000 0.16715 $167.15

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI8800EDB-T2-E1TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 27,000 - Immediate
  • Unit Price: $0.15702
  • Digi-Reel®  : SI8800EDB-T2-E1DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 27,369 - Immediate
  • Unit Price: Digi-Reel®

SI8800EDB-T2-E1

Datasheet
Digi-Key Part Number SI8800EDB-T2-E1CT-ND
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Manufacturer

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Manufacturer Part Number SI8800EDB-T2-E1
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Description MOSFET N-CH 20V MICROFOOT
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Manufacturer Standard Lead Time 30 Weeks
Detailed Description

N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

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Documents & Media
Datasheets SI8800EDB
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI8800EDB
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 8V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Part Number SI8800
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI8800EDB-T2-E1CT