SI7858BDP-T1-GE3 N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
5,980 In Stock
Can ship immediately

All prices are in USD.
Price Break Unit Price Extended Price
1 1.58000 $1.58
10 1.41600 $14.16
25 1.34400 $33.60
100 1.00800 $100.80
250 0.99840 $249.60
500 0.85440 $427.20
1,000 0.69600 $696.00
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Alternate Package
  • Tape & Reel (TR)  : SI7858BDP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 5,980 - Immediate
  • Unit Price: $0.68640
  • Digi-Reel®  : SI7858BDP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,980 - Immediate
  • Unit Price: Digi-Reel®


Digi-Key Part Number SI7858BDP-T1-GE3CT-ND

Manufacturer Part Number SI7858BDP-T1-GE3
Description MOSFET N-CH 12V 40A PPAK SO-8
Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Documents & Media
Datasheets SI7858BDP
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SI7858BDP
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5760pF @ 6V
FET Feature -
Power Dissipation (Max) 5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SI7858
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI7858BDP-T1-GE3CT