SI7812DN-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

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Product Overview

Digi-Key Part Number	SI7812DN-T1-GE3CT-ND
Quantity Available	13,029 Can ship immediately
Manufacturer	Vishay Siliconix
Manufacturer Part Number	SI7812DN-T1-GE3
Description	MOSFET N-CH 75V 16A 1212-8 PPAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Detailed Description	N-Channel 75V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Documents & Media

Datasheets	SI7812DN
Video File	MOSFET Technologies for Power Conversion
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 35V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs	37 mOhm @ 7.2A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8