SI7615DN-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

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Product Overview

Digi-Key Part Number	SI7615DN-T1-GE3CT-ND
Quantity Available	8,849 Can ship immediately
Manufacturer	Vishay Siliconix
Manufacturer Part Number	SI7615DN-T1-GE3
Description	MOSFET P-CH 20V 35A 1212-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	22 Weeks
Detailed Description	P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Documents & Media

Datasheets	SI7615DN
Video File	MOSFET Technologies for Power Conversion
PCN Assembly/Origin	Multiple Fabracation Changes09/Jul/2014 Multiple Devices 11/Dec/2015
Online Catalog	P-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	183nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 20A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8