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SI7178DP-T1-GE3 N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
7,984 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.35000 $2.35
10 2.11400 $21.14
25 1.99440 $49.86
100 1.55570 $155.57
250 1.51584 $378.96
500 1.31638 $658.19
1,000 1.11692 $1,116.92
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  • Tape & Reel (TR)  : SI7178DP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $1.10096
  • Digi-Reel®  : SI7178DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 7,984 - Immediate
  • Unit Price: Digi-Reel®

SI7178DP-T1-GE3

Datasheet
Digi-Key Part Number SI7178DP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7178DP-T1-GE3
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Description MOSFET N-CH 100V 60A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7178DP
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SI7178DP
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2870pF @ 50V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SI7178
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI7178DP-T1-GE3CT