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SI6423DQ-T1-GE3 P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
Price & Procurement
6,917 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.68000 $1.68
10 1.51100 $15.11
25 1.42520 $35.63
100 1.11150 $111.15
250 1.08300 $270.75
500 0.94050 $470.25
1,000 0.79800 $798.00
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Alternate Package
  • Tape & Reel (TR)  : SI6423DQ-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 6,000 - Immediate
  • Unit Price: $0.78660
  • Digi-Reel®  : SI6423DQ-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 6,917 - Immediate
  • Unit Price: Digi-Reel®

SI6423DQ-T1-GE3

Datasheet
Digi-Key Part Number SI6423DQ-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI6423DQ-T1-GE3
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Description MOSFET P-CH 12V 8.2A 8-TSSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

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Documents & Media
Datasheets Si6423DQ
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si6423DQ
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.05W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Base Part Number SI6423
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI6423DQ-T1-GE3CT