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SI4931DY-T1-GE3 Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO
Price & Procurement
21,219 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.96000 $0.96
10 0.86200 $8.62
25 0.81800 $20.45
100 0.61360 $61.36
250 0.60776 $151.94
500 0.52012 $260.06
1,000 0.42369 $423.69
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Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4931DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 20,000 - Immediate
  • Unit Price: $0.41785
  • Digi-Reel®  : SI4931DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 21,219 - Immediate
  • Unit Price: Digi-Reel®

SI4931DY-T1-GE3

Datasheet
Digi-Key Part Number SI4931DY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4931DY-T1-GE3
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Description MOSFET 2P-CH 12V 6.7A 8SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO

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Documents & Media
Datasheets SI4931DY
HTML Datasheet SI4931DY
Online Catalog P-Channel Logic Level Gate FETs
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number SI4931
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4931DY-T1-GE3CT