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SI4925BDY-T1-E3 Mosfet Array 2 P-Channel (Dual) 30V 5.3A 1.1W Surface Mount 8-SO
Price & Procurement
7,215 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.14000 $1.14
10 1.02300 $10.23
25 0.97080 $24.27
100 0.72810 $72.81
250 0.72112 $180.28
500 0.61712 $308.56
1,000 0.50272 $502.72
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4925BDY-T1-E3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 5,000 - Immediate
  • Unit Price: $0.49578
  • Digi-Reel®  : SI4925BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 7,215 - Immediate
  • Unit Price: Digi-Reel®

SI4925BDY-T1-E3

Datasheet
Digi-Key Part Number SI4925BDY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4925BDY-T1-E3
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Description MOSFET 2P-CH 30V 5.3A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array 2 P-Channel (Dual) 30V 5.3A 1.1W Surface Mount 8-SO

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Documents & Media
Datasheets SI4925BDY
HTML Datasheet SI4925BDY
EDA / CAD Models Download from Ultra Librarian
Online Catalog P-Channel Logic Level Gate FETs
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number SI4925
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4925BDY-T1-E3CT