SI4823DY-T1-E3 P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SO
Product Overview
Digi-Key Part Number SI4823DY-T1-E3-ND
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Manufacturer Part Number

SI4823DY-T1-E3

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Description MOSFET P-CH 20V 4.1A 8-SOIC
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Detailed Description

P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SO

Copy   P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SO
Documents & Media
Datasheets SI4823DY
Video File MOSFET Technologies for Power Conversion
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series LITTLE FOOT®
Packaging ? Tape & Reel (TR) ?
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 108 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.7W (Ta), 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 2,500

18:39:51 11/16/2018