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SI4559ADY-T1-GE3 Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SO
Price & Procurement
51,980 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.23000 $1.23
10 1.09800 $10.98
25 1.04200 $26.05
100 0.78160 $78.16
250 0.77416 $193.54
500 0.66252 $331.26
1,000 0.53969 $539.69
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Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4559ADY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 50,000 - Immediate
  • Unit Price: $0.53225
  • Digi-Reel®  : SI4559ADY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 51,980 - Immediate
  • Unit Price: Digi-Reel®

SI4559ADY-T1-GE3

Datasheet
Digi-Key Part Number SI4559ADY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4559ADY-T1-GE3
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Description MOSFET N/P-CH 60V 5.3A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SO

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Documents & Media
Datasheets Si4559ADY
EDA / CAD Models Download from Ultra Librarian
Online Catalog N and P-Channel Logic Level Gate FETs
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A, 3.9A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Power - Max 3.1W, 3.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number SI4559
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4559ADY-T1-GE3CT