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SI4491EDY-T1-GE3 P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SO
Price & Procurement
404 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.92000 $0.92
10 0.82600 $8.26
25 0.78400 $19.60
100 0.58800 $58.80
250 0.58240 $145.60
500 0.49840 $249.20
1,000 0.40600 $406.00
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Alternate Package
  • Digi-Reel®  : SI4491EDY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 404 - Immediate
  • Unit Price: Digi-Reel®

SI4491EDY-T1-GE3

Datasheet
Digi-Key Part Number SI4491EDY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4491EDY-T1-GE3
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Description MOSFET P-CH 30V 17.3A 8-SO
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4491EDY-T1-GE3
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Site 12/Sep/2018
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 15V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 6.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4491EDY-T1-GE3CT