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SI4434DY-T1-E3 N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO
Price & Procurement
14,711 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.35000 $2.35
10 2.11400 $21.14
25 1.99440 $49.86
100 1.55570 $155.57
250 1.51584 $378.96
500 1.31638 $658.19
1,000 1.11692 $1,116.92
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Alternate Package
  • Tape & Reel (TR)  : SI4434DY-T1-E3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 14,711 - Immediate
  • Unit Price: $1.10096
  • Digi-Reel®  : SI4434DY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 14,711 - Immediate
  • Unit Price: Digi-Reel®

SI4434DY-T1-E3

Datasheet
Digi-Key Part Number SI4434DY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4434DY-T1-E3
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Description MOSFET N-CH 250V 2.1A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO

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Documents & Media
Datasheets SI4434DY
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI4434DY
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.56W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4434
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI4434DY-T1-E3CT