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SI4136DY-T1-GE3 N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
Price & Procurement
9,079 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.55000 $1.55
10 1.38700 $13.87
25 1.31600 $32.90
100 0.98700 $98.70
250 0.97760 $244.40
500 0.83660 $418.30
1,000 0.68150 $681.50
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Alternate Package
  • Tape & Reel (TR)  : SI4136DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 7,500 - Immediate
  • Unit Price: $0.67210
  • Digi-Reel®  : SI4136DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 9,079 - Immediate
  • Unit Price: Digi-Reel®

SI4136DY-T1-GE3

Datasheet
Digi-Key Part Number SI4136DY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4136DY-T1-GE3
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Description MOSFET N-CH 20V 46A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4136DY
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SI4136DY
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 10V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4136
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI4136DY-T1-GE3CT